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Results 1 to 25 of 121

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Anisotropic photoetching of III-V semiconductors. II, Kinetics and structural factorsVAN DE VEN, J; NABBEN, H. J. P.Journal of the Electrochemical Society. 1991, Vol 138, Num 1, pp 144-152, issn 0013-4651Article

Choosing a photoplotter for generating PWB artworkMCCALEB, W. L.Electri.onics. 1987, Vol 33, Num 7, pp 24-25, issn 0745-4309Article

Laser-induced trench etching of GaAs in aqueous KOH solutionLEE, C; TAKAI, M; YADA, T et al.Applied physics. A, Solids and surfaces. 1990, Vol 51, Num 4, pp 340-343, issn 0721-7250Article

Reproducible nuclear magnetic resonance surface coil fabrication by combining computer-aided design and a photoresist processFAN, T. W.-M; HIGASHI, R. M.Analytical chemistry (Washington, DC). 1989, Vol 61, Num 6, pp 636-638, issn 0003-2700Article

Première réalisation de bétons photogravés coulés en place = First in-situ photo-engraved concrete buildingCahiers techniques du bâtiment. 2000, Num 205, pp 48-49, issn 0241-6794Article

L'excellence du marquage laser = Pre-eminence of laser markingVASSELLE, J. B.Plastiques modernes et élastomères. 1995, Vol 47, Num 6, pp 42-44, issn 0032-1303Article

Pulsed ultraviolet laser interactions with organic polymers : dependence of mechanism upon laser powerSRINIVASAN, R.Polymer degradation and stability. 1994, Vol 43, Num 1, pp 101-107, issn 0141-3910Article

A study on the production of 950°C moiré gratings in metal materialsHUIMIN, X; DIETZ, P; SCHMIDT, A et al.Strain. 1997, Vol 33, Num 2, pp 53-56, issn 0039-2103Article

ASP: artwork specifications in prologHILL, E. F.ICL technical journal. 1988, Vol 6, Num 2, pp 321-335, issn 0142-1557Article

Mechanisms of water photooxidation at n-TiO2 rutile single crystal oriented electrodes under UV illumination in competition with photocorrosionSALVADOR, Pedro.Progress in surface science. 2011, Vol 86, Num 1-2, pp 41-58, issn 0079-6816, 18 p.Article

Electrochemical etching of patterned Al (10 0) foils in HClBREVNOV, Dmitri A.Journal of micromechanics and microengineering (Print). 2008, Vol 18, Num 8, issn 0960-1317, 087001.1-087001.5Article

Reynolds number dependence of the drag coefficient for laminar flow through fine-scale photoetched screensO'HERN, T. J; TORCZYNSKI, J. R.Experiments in fluids. 1993, Vol 15, Num 1, pp 75-81, issn 0723-4864Article

Photoetching and modification of organic polymer surfaces with vacuum UV radiationTAKACS, G. A; VUKANOVIC, V; TRACY, D et al.Polymer degradation and stability. 1993, Vol 40, Num 1, pp 73-81, issn 0141-3910Article

Mechanistic studies of photoinduced reactions at semiconductor surfacesRICHTER, L. J; CAVANAGH, R. R.Progress in surface science. 1992, Vol 39, Num 2, pp 155-226, issn 0079-6816Article

Effect of laser light on n-GaAs photoetchingSVORCIK, V; RYBKA, V.Applied physics. A, Solids and surfaces. 1990, Vol 51, Num 1, pp 61-63, issn 0721-7250Article

Quantitative measurement of the ablation rate of poly (mentyl methacrylate) with 193-nm excimer laser radiationVAN SAARLOOS, P. P; CONSTABLE, I. J.Journal of applied physics. 1990, Vol 68, Num 1, pp 377-379, issn 0021-8979, 3 p.Article

Synchrotron radiation direct photo etching of polymersZHANG, Y.Advances in polymer science. 2004, Vol 168, pp 291-340, issn 0065-3195, 50 p.Article

Light assisted formation of porous silicon investigated by X-ray diffraction and reflectivityCHAMARD, V; SETZU, S; ROMESTAIN, R et al.Applied surface science. 2002, Vol 191, Num 1-4, pp 319-327, issn 0169-4332Article

Measurement of biaxial stress using electrodeposited copper foil with a microcircular hole : Method using the probability of the occurrence of slipKITAOKA, S; CHEN, J.-Q; EGAMI, N et al.JSME international journal. Series A, mechanics and material engineering. 1996, Vol 39, Num 4, pp 533-539, issn 1340-8046Article

Frequency-scanned gratings consisting of photo-etched arraysJOHANSSON, F. S.IEEE transactions on antennas and propagation. 1989, Vol 37, Num 8, pp 996-1002, issn 0018-926XArticle

Mercury-sensitized hydrogen radical photoetching of hydrogenated amorphous siliconHIRAMATSU, M; KAWAKYU, Y.Japanese journal of applied physics. 1996, Vol 35, Num 12A, pp L1547-L1549, issn 0021-4922, 2Article

Photoetching anisotropy of heavily doped Si(100) and Si(111) surfacesRHODIN, T. N; PAULSEN-BOAZ, C.Surface science. 1996, Vol 357-58, pp 753-758, issn 0039-6028Conference Paper

Analysis of determining factors in the kinetics of anisotropic photoetching of GaAsVAN DE VEN, J; NABBEN, H. J. P.Journal of applied physics. 1990, Vol 67, Num 12, pp 7572-7575, issn 0021-8979Article

Theoretical study of ablative photodecomposition in polymeric solidsPALMER, B. J; KEYES, T; CLARKE, R. H et al.Journal of physical chemistry (1952). 1989, Vol 93, Num 21, pp 7509-7516, issn 0022-3654, 8 p.Article

One-pot photoetching to control size, surface oxygen groups, and dispersion of fullerene particles in waterSHUAI ZHANG; LIGUO SUN; CHEN, Hai-Yun et al.Journal of nanoparticle research. 2013, Vol 15, Num 8, issn 1388-0764, 1867.1-1867.9Article

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